| PART |
Description |
Maker |
| W26010A W26010AJ-15 W26010AJ-151 W26010AJ-20 W2601 |
64K 16 HIGH-SPEED CMOS STATIC RAM 64K6 HIGH-SPEED的CMOS静态RAM
64K 16 HIGH-SPEED CMOS STATIC RAM 64K X 16 STANDARD SRAM, 20 ns, PDSO44
HIGH SPEED SRAM
|
Winbond Electronics, Corp.
WINBOND[Winbond]
|
| AT28HC64B AT28HC64B-120 AT28HC64B-12JC AT28HC64B-1 |
64K 8K x 8 High Speed CMOS E2PROM with Page Write and Software Data Protection
64K (8K x 8) High Speed CMOS
From old datasheet system
|
ATMEL[ATMEL Corporation]
|
| P4C1298-45JMB P4C1298-45PMB P4C1298-45JC P4C1298-4 |
ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM 64K X 4 STANDARD SRAM, 15 ns, CDIP28
ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM 超高4K的4静态CMOS存储
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| KM616V1002CI |
64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 静RAM(3.3V 工作))
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| AT29C512-9 AT29C512-90JU AT29C512-70TC AT29C512-15 |
High Speed CMOS Logic Dual Positive-Edge-Triggered D-Type Flip-Flops with Set and Reset 14-PDIP -55 to 125 64K X 8 FLASH 5V PROM, 90 ns, PDIP32
High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-SOIC -55 to 125 64K X 8 FLASH 5V PROM, 90 ns, PQCC32
High Speed CMOS Logic Quad 2-Input Exclusive-NOR Gates 14-SOIC -55 to 125 64K X 8 FLASH 5V PROM, 70 ns, PQCC32
High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-PDIP -55 to 125 64K X 8 FLASH 5V PROM, 70 ns, PQCC32
High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-SOIC -55 to 125 64K X 8 FLASH 5V PROM, 70 ns, PDIP32
High Speed CMOS Logic Dual Positive-Edge-Triggered D-Type Flip-Flops with Set and Reset 14-SOIC -55 to 125
High Speed CMOS Logic Phase-Locked Loop with VCO and Lock Detector 16-SOIC -55 to 125
512K (64K x 8) 5-volt Only Flash Memory
512K 64K x 8 5-volt Only CMOS Flash Memory
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| KM616V1002B |
64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 静RAM(3.3V 工作)) 64K的16位高速CMOS静态RAM.3V的工作）4K的16位高速的CMOS静态随机存储器.3V的工作）
|
Samsung Semiconductor Co., Ltd.
|
| M27C1024-35C1 M27C1024-90C1 M27C1024-12C6 M27C1024 |
64K X 16 OTPROM, 100 ns, PDSO40
64K X 16 OTPROM, 100 ns, PQCC44
64K X 16 OTPROM, 100 ns, PDIP40
64K X 16 UVPROM, 100 ns, CDIP40
64K X 16 UVPROM, 45 ns, CDIP40
1 MBIT (64KB X16) UV EPROM AND OTP EPROM
|
STMICROELECTRONICS
ST Microelectronics
|
| IDT7038L20PFI |
HIGH - SPEED 64K x 18 DUAL - PORT STATIC RAM 64K X 18 DUAL-PORT SRAM, 20 ns, PQFP100
|
Integrated Device Technology, Inc.
|
| HM621664HB HM621664HBJP-20 |
1M High Speed SRAM
1 M High Speed SRAM (64-kword ×16-bit)(1 M 高SRAM (64k×16)
|
Hitachi Semiconductor
Hitachi,Ltd.
|
| W25P243A W25P243A-4A W25P243A-5 W25P243A-6 W25P243 |
64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM
From old datasheet system
DIODE ZENER QUAD COMMON-ANODE 200mW 12Vz 5mA-Izt 0.05 0.1uA-Ir 8 SOT-363 3K/REEL 64K X 64 STANDARD SRAM, 4.5 ns, PQFP128
|
WINBOND[Winbond]
Winbond Electronics Corp
Vishay Intertechnology, Inc.
|
| CY27H512 CY27H512-25 CY27H512-25HC CY27H512-25JC |
64K x 8 High-Speed CMOS EPROM
|
Cypress Semiconductor
|
